2005年12月5日 · The strain, composition and thermal stability of the channel and VS in Ge/Si 1−x Ge x structures for p-HMOS devices was studied by XRD reciprocal space maps and RBS. Samples with nominally 100% Ge and thicknesses of 16 and 20 nm, as deposited and after annealing at 650 °C, were studied.

2001年2月6日 · SiGe is the first heteroepitaxial process to be incorporated in a high-volume Si Fab environment and, as such it introduces new characterization challenges. Heteroepitaxial structures are common in the III–V industry and X-ray diffraction (XRD) characterization techniques are well established for these materials.

2019年9月21日 · The composition of SiGe thin films can be determined from the split angle between the SiGe and Si substrate peak in the XRD spectra. Because of the internal reflection at SiGe/Si interfaces, X-rays can cause interference in the epitaxial layer.

2023年4月28日 · A weak XRD signal is seen in between the two SiGe peaks in Fig. 2a. A corresponding signal is also seen in an RSM around 333 diffraction (reported in Ref 8 ). These portions in the reciprocal space map correspond to a strain-relaxed Si 0.65 Ge 0.35 whose normal direction is almost aligned to but slightly distributed around the [110] axis of the ...

2006年6月5日 · For this purpose, we performed X-ray diffraction (XRD) measurements. The results of these measurements indicate that the in-plane strain parameters of SiGe layer are not isotropic under some growth conditions.

This article reports the characterization of thin SiGe/Si(100) epilayers using reciprocal space maps measured by a laboratory X-ray instrument and a high-resolution X-ray diffraction study of partially relaxed SiGe/Si thin films.

An epitaxial SixGey layer on a silicon substrate was quantitatively evaluated using rocking curve (RC) and reciprocal space map (RSM) obtained by powder X-ray diffraction (XRD), energy-dispersive...

2023年2月23日 · We investigated 1-D and 2-D chemical depth mapping using SIMS, XPS and TEM-EDX. For strain/lattice spacing engineering effects, we used XRD and Raman analysis for Ge, Sn and C implantation into Si and SiGe wafers followed by RTA or laser melt annealing to form surface thin layers of SiGe, SiGeSn and SiGeC.

High resolution XRD (HR-XRD) is a well known method for measuring the composition and thickness of compound semiconductors such as SiGe, AlGaAs, InGaAs, and other materials. When dopants or impurities are added substitutionally to a single crystal lattice the lattice will be strained by the presence of the dopant atoms.

powerful tool for studying interdiffusion in Si/SiGe heterostructures and in this paper we investigate several key issues related to its use and interpretation. Interdiffusion at Si/SiGe interfaces exhibits a complicated concentration dependence and can not be treated with linear diffusion calculations.6 Both the exponential prefactor and