2022年4月5日 · In this study, fast and selective isotropic etching of SiN x over SiO y has been investigated using a ClF 3 /H 2 remote plasma in an inductively coupled plasma system. The …

2009年11月1日 · We achieved SiN film etching with high selectivity using an organic solvent (ethylene glycol dimethyl ether) containing anhydrous hydrogen fluoride. Selectivity as high as …

2024年1月10日 · SiN刻蚀：偏chemical etch，能够刻蚀OX的gas都可以对Nit进行刻蚀，只是由于Si-N键能在Si-O与Si-Si之间，选择比可能会不好。一般常用etch gas为：CHF3、CH2F2 …

常见Dry etch gas种类、刻蚀材料及相关原理分析. 写在前面： Dry etch gas是plasma 刻蚀的重要气体来源，gas的选择一般遵循两个原则：①能和被刻蚀材料发生反应；②反应的生成物必须 …

2023年8月29日 · Highly selective etching of silicon nitride over silicon oxide is one of the most important processes especially for the fabrication of vertical semiconductor devices including …

• N2 is an important etch product in silicon nitride etching. • Desorption of nitrogen can often be the limiting factor in nitride etching. • The addition of N2 to the plasma etch chemistry can …

1999年11月1日 · A highly selective dry etching process for the removal of silicon nitride (Si 3 N 4) layers from silicon and silicon dioxide (SiO 2) is described and its mechanism examined. This …

Selective, anisotropic etching of silicon nitride (SiN) over Si or SiO 2 is important for fin field-effect transistor gate fab-rication.1–4 High F-atom generating plasma feed gases, such as CF …

2021年3月1日 · Using plasma of CH 2 FCHF 2 chemistry, selective etching of SiN against SiO 2 and poly-Si films was achieved for mixing ratios with less than 25% CH 2 FCHF 2 diluted with …

2016年12月15日 · A quantitative estimation of the chemical bonds found on the surface is obtained by a combination of infrared absorption spectroscopy in ATR mode, X-ray …