2022年10月17日 · Here, we develop a physical vapor deposition approach to synthesize two-dimensional p-doped SnSe. The local phase segregation of SnSe 2 microdomains and accompanying interfacial charge transfer...

2023年2月14日 · In this work, we report the low-pressure PVD synthesis of high-quality 2D SnSe crystals with thinner thickness and larger lateral sizes. The as-synthesized SnSe displays high crystallinity and phase purity, as confirmed by Raman, X-ray photoemission spectroscopy (XPS), and scanning transmission electron ( (micro-scopy)) (STEM).

2020年8月18日 · Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene and the demonstration of controlled room-temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM).

2023年1月23日 · Here we explore the in-plane anisotropic exciton-polariton propagation in SnSe, a group-IV monochalcogenide semiconductor that forms ferroelectric domains and shows...

2024年6月1日 · In summary, we confirmed that Bi doping can enhance the ferroelectricity of 2D layered SnSe thin by using the PFM and the neuromorphic memristor based on 2D ferroelectric Sn 1-x Bi x Se can simultaneously sense, process, and store in situ to achieve a variety of functions under optical and electrical fields.

In this work, we report the low-pressure PVD synthesis of high-quality 2D SnSe crystals with thinner thickness and larger lateral sizes. The as-synthesized SnSe displays high crystallinity and phase purity, as confirmed by Raman, X-ray photoemission spectroscopy (XPS), and scanning transmission electron ((micro-scopy)) (STEM).

2024年9月10日 · 通过对其形貌、元素组成比例以及晶体结构的表征证实表面平整、高结晶度、具有褶皱结构的SnSe纳米片被成功获得,为研究其铁电性提供材料储备。 (2)二维SnSe材料的铁电半导体特性研究。 将剥离的不同厚度SnSe纳米片转移到预先沉积有Au电极,厚度约50 nm,的SiO2/Si衬底上,制备Au/SnSe/Au 两端平面器件。 在室温真空环境下,采用双波法测试证实样品均具有铁电性,并通过铁电仪表征发现纳米片的极化强度约为1.4µC/cm2,而且,采用压电力显微镜 …

2022年12月20日 · SnSe是一种典型的非磁性元件，但通过空穴掺杂可以诱发磁矩。 在此，研究者设计了一种高通量PVD方法，以可控的方式在云母上合成二维p掺杂SnSe。 由于SnSe2微畴的局部相偏析和伴随的界面电荷转移，在二维p掺杂SnSe中发现了金属特征。

2023年2月14日 · In this work, high‐quality 2D SnSe crystals are synthesized via low‐pressure PVD, which display in‐plane ferroelectric domains observed by piezoresponse force microscopy and...

2021年4月1日 · Lateral piezoresponse force microscopy provides unprecedented insight into the stacking-dependent polarization and ferroelectric domain structures in large few-layer SnS flakes. The combined results establish a basis for further fundamental studies and applications of SnS and other group IV monochalcogenides in the few-layer regime.