
Identification and Manipulation of Atomic Defects in Monolayer SnSe
2024年9月6日 · Here, by combining low-temperature STM with DFT calculations, we have conducted a comprehensive analysis of the atomic and electronic structures of point defects in a single van der Waals monolayer (two atomic layers) of SnSe. This includes 8 types of intrinsic defects and 3 types of extrinsic defects.
A microscopic study investigating the structure of SnSe surfaces
2016年9月1日 · Herein, for the first time, the atomic and electronic structures of SnSe surfaces are studied by a home-built low temperature scanning tunneling microscope (STM) and density functional theory (DFT) calculations. The cleaved surface of SnSe is comprised of covalently bonded Se and Sn atoms in zigzag patterns.
Microscopic Manipulation of Ferroelectric Domains in SnSe …
2020年8月18日 · Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene and the demonstration of controlled room-temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM).
Unidentified major p-type source in SnSe: Multivacancies
2022年5月13日 · Sn has been replaced with various lower group dopants to achieve successful p-type doping in SnSe with high ZT values. A known, facile, and powerful alternative way to introduce a hole carrier is...
Purely in-plane ferroelectricity in monolayer SnS at room ... - Nature
2020年5月15日 · Herein, an in-plane ferroelectricity is demonstrated for micrometer-size monolayer SnS at room temperature. SnS has been commonly regarded to exhibit the odd–even effect, where the centrosymmetry...
Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals
2016年12月12日 · The synthesis of n-type SnSe with a ZT value of 2.2 have been achieved by Bi doping in a SnSe single crystal, and the electrical conductivity increased with Bi-doping concentration.
Defect-induced electronic structures on SnSe surfaces
2019年6月18日 · Using a low-temperature scanning tunneling microscope (STM), we investigated the role of atomic-scale defects of a cleaved SnSe(100) surface on the electronic structure around them. We found in empty-state STM images that Sn vacancies induce dark contrast around them, proving their role as a p-type dopant.
By combining scanning tunneling microscopy (STM) characterization with first-principles calculations, we identified four types of atomic/molecular vacancies, four types of atomic substitutions, and three types of extrinsic defects.
[2004.03884] Microscopic manipulation of ferroelectric domains in SnSe …
2020年4月8日 · This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which is difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important ...
Microscopic Manipulation of Ferroelectric Domains in SnSe
2020年9月9日 · Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene and the demonstration of controlled room-temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM).