2021年9月1日 · The electronic structure and composition of the SnSSe/MGS, SnSSe/CNT, and SnSSe/CNP were characterized by XPS (Figs. 4, S6, and S7). Fig. 4 (a) shows that the main elements in the SnSSe/MGS nanocomposite are carbon, tin, sulfur, and selenium elements.

2019年9月20日 · Surface chemical states of the SnSSe/rGO electrode was assessed by using XPS technology. As shown in Fig. 3 a, the strong C signal derived from the rGO matrix and the Sn, S, and Se signals derived from SnSSe nanosheets are recognized and marked.

2022年8月5日 · Herein, 2D SnSSe (SSS) porous nanoplates (Sn: S: Se=1: 1: 0.5) with atom-level heterojunctions were obtained from optimized hydrothermal synthesis, and a novel SSS-based photoelectrochemical detector was constructed accordingly.

2019年4月5日 · XPS analyses confirmed the presence of Sn, S and Se elements on the surface of the film. The bandgap of the films was calculated from the optical transmittance in the visible spectrum, showing direct transitions for SnS and SnSSe at 1.3 eV and 1.12 eV respectively.

X-ray photoelectron spectroscopy (XPS) is considered to be an effective method in the determination of elemental composition. The broadband XPS spectrum of SnSSe is...

The X-ray photoelectron spectroscopy (XPS) is considered to be an effective method in the determination of elemental composition. The broadband XPS spectrum of SnSSe is shown in Figure 1E. In Figure 1F, the obvious peaks at 54.6 and 53.8 eV are from Se 3d 3/2 and Se 3d 5/2, which demonstrates the divalent selenium exists.

The GaN/SnS 2 /SnSSe heterojunction showcases a staircase-like (type-II) band alignment and exceptional performance metrics: high photoresponsivity of 314.96 A W −1, specific detectivity of 2.0 × 10 14 jones, and external quantum efficiency of 10.7 × 10 4 % under 365 nm illumination at 150 nW cm −2 intensity and 3 V bias. Notably, the ...

Compared with SnS2 and SnSe2, SnSSe shows high hole mobilities and short relaxation time, resulting in potential applications in photoelectric devices. Here SnSSe is investi-gated for the ultrashort pulse generation in the mode-locked fiber laser. The prepared SnSSe saturable absorber (SA) exhibits a large modulation depth of 56.75%.

The occurrence of Sn-S polytypes was examined using Raman and XPS studies. Annealing causes changes in the optical properties, as observed through optical analysis, which can be attributed to the...

By incorporating SnSSe SA into the laser, the Q-switched pulses as short as 547.8 ns are achieved at 1530.07 nm. As far as we know, this is the first successful application of SnSSe in Q-switched lasers. Our investigation not only prove the optical nonlinearity of SnSSe, but also reveal the potential of SnSSe SA in ultrafast photonics.