本文将首先介绍STT-MRAM的基本存储单元—— 磁隧道结(MagneticTunnelJunction,MTJ),阐述其基本 原理与技术发展历程,然后探讨近期在界面垂直磁各向 异性、双界面结构磁隧道结和新型自旋轨道矩写入技 术等3个方面的研究进展,随后扼要地总结STT-MRAM

STT-MRAM是通过自旋电流实现信息写入的一种新型非易失性 磁随机存储器，是磁性存储器 MRAM 的二代产品。 STT-MRAM存储单元的核心仍然是一个MTJ，由两层不同厚度的 铁磁层 及一层几个纳米厚的非磁性隔离层组成，它是通过自旋电流实现信息写入的。 传统的存储技术，如 SRAM、DRAM、Flash 等在现代电子行业的确取得了显著的成就，但是随着半导体制造工艺接近 20nm 水平，这些传统技术的缺陷就越来越明显。 可扩展性是一种存储器技术可成功应用的重 …

Spin-transfer torque magnetic tunnel junction (STT-MTJ) broadens the operation of electronic devices by using the electron spin along with its charge. In this work, the static behavior of the STT-MTJ is investigated using a mathematical model and a SPICE subcircuit.

Dec 1, 2014 · STT-MTJ is a promising device for future high-density and low-power integrated systems. To enable design exploration of STT-MTJ, this paper presents a fully compact model for efficient SPICE simulation.

Aug 30, 2022 · In light of the significance of MTJ devices in next-generation computing, this paper presents a physics-based STT/SHE MTJ model for hybrid MTJ/CMOS circuit simulation, that accurately emulates the device physics and stochastic thermal noise behavior of the MTJ.

Aug 19, 2021 · We have investigated the spin-Hall effect (SHE)-assisted spin transfer torque (STT) switching mechanism in a three-terminal MTJ device developed using p-MTJ (perpendicular magnetic tunnel junction) and heavy metal materials of high atomic number, which possesses large spin–orbit interaction.

In this work, we develop a simulation framework of hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink, which is mainly composed of a physics-based STT-MTJ model, a controlled resistor, and a current sensor.

Jun 26, 2023 · We have developed and optimized two categories of spin-ransfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance ratio, low critical current, high outputpower in the micro-watt range, and auto-oscillation behavior.

To design reliable hybrid CMOS circuits including STT-MTJs, one needs to use a compact model accounting for its stochasticity in the circuit simulations. This paper proposes a compact model that accurately mimics the MTJ stochastic switching behavior and …

Oct 1, 2021 · Spin-transfer torque magnetic tunnel junction (STT-MTJ) technology is an attractive solution for designing non-volatile Logic-in-Memory (LIM) architectures. This work explores a smart material implication (SIMPLY) LIM scheme based on nanoscale STT-MTJs.