2022年2月23日 · Here we report a strategy of using active chalcogen monomer supply to grow high-quality TMDs in a robust and controllable manner, e.g., MoS 2 monolayers perform representative photoluminescent...

2022年1月1日 · These prepared 2D alloyed TMD nanosheets showed tunable bandgaps and electronic structure, good scalability, and controllable high-quality exfoliation, which provide a highly promising way for functionalizing the 2D TMD nanosheets into wide applications like electronics, optoelectronics, and catalysis.

2022年11月29日 · Here we present a systematic analysis of the phase behavior of substitutional 2D alloys in the TMD family on both the metal and the chalcogenide site. The phase behavior is quantified in terms of a metastability metric and benchmarked against systematic computational screening of configurational energy landscapes from First-Principles.

2023年10月27日 · This paper comprehensively analyses 2D TMD alloy materials, covering their growth, preparation, optoelectronic properties, and various applications including hydrogen evolution reaction catalysis, field-effect transistors, lithium-sulphur battery catalysts, and lasers.

2025年1月28日 · The “Face-to-Face” general synthesis strategy enables large-area, uniform, and highly reproducible preparation of multiple 2D TMD gradient alloys in a single configuration through precise control of ...

2024年11月2日 · Here, results on the tailored growth of monolayers (MLs) of transition metal dichalcogenides (TMDs) are presented using chemical vapor deposition (CVD) techniques. To enable reproducible growth, the flow of chalcogen precursors is controlled by Knudsen cells providing an advantage in comparison to the commonly used open crucible techniques.

2024年8月3日 · We demonstrate the ability of this potential to calculate vibrational properties of alloy TMDs including phonon spectra for pure monolayers, and Vibrational Density of States (VDOS) and...

2022年10月17日 · Here, we study the thermodynamic and electronic properties of TMD alloys with chemical formula MX 2 in the T structure (space group P3̅m1, ITCA number 164) and the H structure (space group P6̅m2; ITCA number 187). For the T structure, we consider mixing on the M-site involving Ti, Zr, and Hf (nine systems) and Pd and Pt (three systems) as ...

2012年11月22日 · Using density-functional theory calculations, we study the stability and electronic properties of single layers of mixed transition metal dichalcogenides (TMDs), such as MoS 2x Se 2 (1–x), which can be referred to as two-dimensional (2D) random alloys.

硒化钒 是一种典型的金属性过渡金属硫化物（MTMD）。 由于硒化钒中相邻V4+-V4+对的强电子耦合使得其具有金属性。 通常块体硒化钒晶体通过 化学气相传输技术 和后续的由上至下剥离过程来获得及纳米厚的硒化钒纳米片。 这个剥离过程缺乏可控性且难以量产获得大面积均匀的薄膜。 而已液相法、物理气相沉积、化学气相沉积法为代表的自下而上合成方法已经被用来制备一些纳米尺度的硒化钒片或硒化钒垂直多晶薄膜等。 然而可控的获得高质量、大晶粒、厚度小于10nm …