2016年8月23日 · We review the latest advances in valleytronics, which have largely been enabled by the isolation of 2D materials (such as graphene and semiconducting transition metal dichalcogenides) that host an...

2019年8月15日 · In this review, we systematically demonstrate the fundamental properties and tuning strategies (optical, electrical, magnetic and mechanical tuning) of valley degree of freedom, summarize the recent progress of TMD-based valleytronic devices.

2023年9月28日 · Here, we demonstrate a room-temperature valley-addressable tungsten disulfide monolayer laser in which the spin of lasing is controlled by the spin of pump without magnetic fields. This effect was achieved by integrating a tungsten disulfide monolayer into a photonic cavity that supports two orthogonal spin modes with high quality factors.

2024年3月20日 · Here, in electron-doping experiments on TMD monolayers, we show that strong doping levels beyond 1013 cm−2 can induce 61% and 37% valley contrast at room temperature in tungsten diselenide and...

2022年6月21日 · By enabling control of valley degrees of freedom in transition-metal dichalcogenides, valley-selective circular dichroism has become a key concept in valleytronics. Herein, we show that valley excitons, bound electron–hole pairs formed at the K or K̅ valleys upon absorption of circularly polarized light, are chiral quasiparticles ...

2019年3月1日 · In this work, we show that the coexistence of Ising and Rashba SOCs in gated/polar TMDs results in novel valley-contrasting Berry curvatures and a special type of valley Hall effect, which we...

2020年7月30日 · Here, we demonstrate control of strong valley polarization (valley quantum coherence) at room temperature of up to ∼50% (∼20%) by strategically designing Coulomb forces and spin–orbit interactions in atomically thin TMDs via chalcogenide alloying. We show that tailor making the carrier density and the relative order between optically ...

2018年11月21日 · van der Waals heterostructures made of graphene and transition metal dichalcogenides (TMDs) are an emerging platform for optoelectronic, -spintronic, and -valleytronic devices that could benefit from (i) strong light–matter interactions and spin–valley locking in TMDs and (ii) exceptional electron and spin transport in graphene.

In present work, we give a computational study on contribution of the second-lowest valley (Q valley about midway between K and Γ) of conduction band on device performance in monolayer TMD based MOSFETs (TMDFETs).

2024年5月15日 · Our work demonstrates the manipulation of the valley polarization of IXs by tunning twist angle in electrically controlled heterostructures, which opens an avenue for electrically controlling the valley degrees of freedom in twistronic devices.