2021年10月18日 · The interface was also examined by scanning TEM-high-angle annular dark field (STEM-HAADF) microscopy (Fig. 2e), with elemental Ta on both two sides while elemental S was present only on one side...

2024年4月23日 · In this study, we present a unique approach to unlock the intertwined two-dimensional Mott-insulator and three-dimensional band-insulator states in bulk 1T-TaS 2 crystals by structuring a...

2023年6月26日 · Here, we employ restacked TaS 2 ─a novel transition metal dichalcogenide (TMD) with weak vdW bonding and twisted angles─to investigate the strain effects of interlayer modulation on the electronic properties. Under pressure, an unexpected transition from metallic to semiconducting-like states occurs.

transition-metal dichalcogenides (TMDs), such as TaS2 or TaSe2, are prototypical charge-density-wave (CDW) systems that spontaneously break lattice symmetry through periodic lattice distortions (PLDs). PLDs are associated with dramatic electronic changes such as metal-to-insulator transitions (1).

2017年7月16日 · 近日，中国科学院上海硅酸盐研究所、上海微系统与信息技术研究所、北京大学等共同合作研究，通过化学剥离成单层TaS2纳米片，以及纳米片抽滤自组装而重新堆叠成TaS2薄膜。

The TaS2-based photoelectrocatalyst demonstrates high hydrogen evolution reaction (HER) activity with the onset overpotential below 575 mV vs. reversible hydrogen electrode (RHE).

In this study, we present a unique approach to unlock the intertwined two-dimensional Mott-insulator and three-dimensional band-insulator states in bulk 1T-TaS2 crystals by structuring a...

TaS2 的典型 HADDF-STEM 图像显示了单层三角形 TaS2 中清晰的原子模式及其扭曲的 FFT 模式。 显示了沿 AB 线的 1T-TaS2 底部强度分布和八面体 TaS2 的结构模型以供对比。

中国科学院上海硅酸盐研究所、中国科学院上海微系统和信息技术研究所、 北京大学等共同合作研究，通过化学剥离得到单层TaS2纳米片以及纳米片抽滤自组装重新堆叠成TaS2薄膜，HAADF-STEM微观电镜观察表明，层与层之间存在堆垛扭曲（图1c），选区电子衍射 ...

A broad pink line in the EDS elemental mapping indicates a TaS2–TaS2 double layer that is clearly seen in the HAADF-STEM image (interlayer spacing 0.61 nm).