
Engineering covalently bonded 2D layered materials by self ...
2020年5月13日 · We first describe the self-intercalation of native atoms—that is, Ta—into a TaS 2 bilayer during MBE deposition on a silicon wafer, as a means to demonstrate the formation of an ic-2D film via...
Scanning tunneling spectroscopic study of monolayer 1T-TaS2 …
2019年12月23日 · Combining the molecular beam epitaxy growth, scanning tunneling microscopy measurements and first-principles calculations, we prepare monolayer 1T-TaS2 and TaSe2 and explore their electronic structures at the atomic scale.
Robust charge-density wave strengthened by electron ... - Nature
2021年10月7日 · Monolayer 1T-TaSe 2 and 1T-NbSe 2 films were grown on bilayer graphene/6H-SiC by using molecular-beam-epitaxy (MBE) method in an ultrahigh vacuum (UHV) of 3 × 10-10 Torr.
Electronic structures and Mott state of epitaxial TaS2 monolayers ...
2024年4月11日 · Layered material TaS2 hosts multiple structural phases and exotic correlated quantum states, including charge density wave (CDW), superconductivity, quantum spin liquid, and Mott insulating state. Here, we synthesized TaS2 monolayers in H and T phases using the molecular beam epitaxial (MBE) method and studied their electronic structures via ...
Understanding the Mott insulating state in 1T-TaS2 and 1T-TaSe2 …
2022年7月19日 · In this article, we review the recent progress of the scanning tunneling microscopy studies of 1T-TaS2 and 1T-TaSe2 for bulk single crystals and molecular beam epitaxy monolayer films. We focus on how to understand the Mott insulating state in the whole set of materials, even when the stacking order takes effect.
Strong correlations and orbital texture in single-layer 1T-TaSe
2020年1月6日 · Our results indicate that electron correlation induces a robust Mott insulator state in single-layer 1T-TaSe 2 that is accompanied by unusual orbital texture. Interlayer coupling weakens the...
Evidence of Nodal Superconductivity in Monolayer 1H‐TaS2 with …
2023年8月18日 · We grow 1H-TaS 2 on highly oriented pyrolytic graphite (HOPG) using molecular beam epitaxy (MBE) (for growth details see the Experimental Section) and investigate its electronic structure using low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS) experiments.
Persistent Charge-Density-Wave Order in Single-Layer TaSe2
We present the electronic characterization of single-layer 1 H -TaSe 2 grown by molecular beam epitaxy using a combined angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy, and density functional theory calculations.
Scanning tunneling spectroscopic study of monolayer 1T-TaS2 …
2019年12月23日 · Combining the molecular beam epitaxy growth, scanning tunneling microscopy measurements and first-principles calculations, we prepare monolayer 1T-TaS2 and TaSe2 and explore their electronic...
Controlling the Charge Density Wave Transition in Single-Layer ...
2023年12月20日 · Here, we report the synthesis of TiTe 2x Se 2(1–x) monolayers using molecular-beam epitaxy (MBE), and we study the evolution of the CDW instability with alloy composition, x. Our in situ reflection high-energy electron diffraction (RHEED) and angle-resolved photoemission (ARPES) measurements demonstrate continuous control of the normal state ...
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