Jul 1, 1991 · The oxidation of alkali-metal (Cs, K) tellurides at room temperature and low oxygen pressure has been studied by X-ray photoelectron and Auger electron spectroscopies (XPS, XAES). The oxidation kinetics is faster than logarithmic and does not saturate for the exposures studied, while a migration of alkali ions to the surface is detected.

在 XPS 分析深度数量级的深度内形成强氧化态梯度（Te2-、Te0、Te4+、Te6+）。 氧浓度显示出类似的梯度。 也形成了 Cs2O2。 表面层保留为 Cs2Te；Te 团簇在表面也保持不反应；只有当 Cs2Te 薄膜严重氧化时，它们才会转化为碲化物。 摘要 利用 X 射线光电子和俄歇电子能谱 (XPS, XAES) 研究了碱金属 (Cs, K) 碲化物在室温和低氧压下的氧化。 氧化动力学比对数快，并且对于所研究的暴露不饱和，同时检测到碱离子迁移到表面。 这些效应在表面具有元素 Te 簇的过度碲 …

Sep 1, 2023 · X-ray photoelectron spectroscopy (XPS) is performed to confirm the surface composition and oxidation of Te1, Te2, and Te3, shown in Fig. 10. The XPS survey spectra of the three films which are similar and show several peaks of …

Te 3d 3/2 and Te 3d 5/2 XPS results from the surface and bulk of (a) intrinsic ZnTe film and (b) ZnTeO film deposited at 10 À5 Torr. Peak intensity is normalized to Te 3d 5/2 peak. TeO 2 was ...

In this work, we explore different routes to passivate p-type CdTe surfaces without any intentional extrinsic passivation layers. To provide deeper insight into the passivation routes, we uniquely...

XPS spectra of (a) Mo 3d and (b) Te 3d core levels of MoTe2 before/after O3 oxidation and after KOH treatment. The black curves are experimental data. The dashed curves are the Lorentzian fits...

Thin films of Cs 2 Te have been produced and analyzed by Auger depth profiling and x-ray photoemission spectroscopy ͑XPS͒. The formation of the photoemissive material passes through different phases, each of them has been characterized by XPS and by its total yield in the spectral region 3.5-5 eV.

The Basic XPS Information Section provides fundamental XPS spectra, BE values, FWHM values, BE tables, overlays of key spectra, histograms and a table of XPS parameters. The Advanced XPS Information Section is a collection of additional spectra, overlays of spectra, peak-fit advice, data collection guidance, material info,

Jan 13, 2022 · Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We...

Two different phases of the transition-metal dichalcogenide and molybdenum ditelluride (1T′-MoTe 2 and 2H-MoTe 2) were grown by chemical vapor transport. Oxygen-free surfaces were generated by exfoliation in air and then analyzed by x-ray photoelectron spectroscopy.