We use the beam of a transmission electron microscope (TEM) to modulate in situ the current–voltage characteristics of a two-terminal monolayer molybdenum disulfide (MoS 2) channel fabricated on a silicon nitride substrate.

为了一探先进制程芯片内部的奥秘，本文选择了一颗今年最新上市的制程为4nm的芯片，借助 透射电子显微镜 （TEM）、 双束聚焦离子束 （DB FIB）、 扫描电子显微镜 （SEM）等先进的显微分析技术，从封装级到晶圆级，逐级对芯片内部的关键工艺结构、材料成分及关键尺寸信息进行了全方位的解析，了解了其结构、材料和工艺详情。 以下是分析过程介绍： 第一步：芯片无损分析. 芯片的封装形式为 POP封装，首先采用3D OM光学显微镜、 X光射线检查设备，对芯片的封装 …

2018年4月12日 · We proposed a transfer length method (TLM) based on 2D transport to support the preceding statement. Scanning tunneling microscopy/spectroscopy (STM/STS) and angle-resolved photoemission...

2021年2月8日 · Tunnel field-effect transistors (TFETs) rely on quantum-mechanical tunnelling and, unlike conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require...

All TEM images here have the same scale •Very little change in physical gate length, only ~0.9x per node •The gate pitch is scaling fast, as 0.7x per node and area scales as 0.5x

In this application note, we present a study into the structure, elemental distribution and crystal orientation of a 22nm FinFET structure, using Nanolab Technologies’ state-of-art TEM instruments and other TEM-based analysis techniques including EELS and PED.

TEM field effect transistor (TEM-FET) architecture with electron beam gating provides a platform for future In Situ electrical measurements. Keywords in situ transmission electron microscopy, transition metal dichalcogenides, field effect transistor, electronic transport, silicon nitride, molybdenum disulfide.

Download scientific diagram | Transmission Electron Microscope (TEM) image of multi-Fin in fabricated FinFET device before gate metal deposition. from publication: Hot Carrier Injection...

A combined transmission electron microscopy-scanning tunneling microscopy (TEM-STM) technique has been used to investigate the force interactions of silicon and germanium...

In the first part, the novel Ge gate-all-around field effect transistors (GAA FETs) are introduced and discussed. Fabrication of Ge GAA FETs requires only simple top-down dry etching and blanket Ge...