Ferroelectric tunnel junction (FTJ) with ultrathin 3 nm-thick Hf 0.5 Zr 0.5 O 2 (HZO) is investigated. The high current density up to 100 A/cm 2 is at least 10 times higher than that in previously reported HZO FTJs. It is suitable for future nanoscale FTJ with a GΩ cell resistance for the application of in-memory computing.

2022年12月1日 · Ferroelectric tunnel junction (FTJ) device based on epitaxial Hf 0.5 Zr 0.5 O 2 (HZO) films was fabricated, allowing excellent electronic synaptic behaviors and high accuracy of 93.7% for MNIST database recognition.

2025年1月1日 · Ferroelectric tunnel junctions (FTJs) based on AlScN ferroelectric material are investigated. A multiscale simulation approach for AlScN FTJs is developed. The results show improved tunnel electroresistance (TER) ratio by using a graphene contact in the FTJ.

2024年1月24日 · Ferroelectric tunnel junctions (FTJs) with ultra-thin ferroelectric films have attracted much attention as two-terminal resistive switching devices due to the...

Ferroelectric tunnel junction (FTJ) based crossbar array is a promising candidate for the implementation of low-power and area-efficient neuro-inspired computing. In this paper, we fabricated and measured a 10 nm thick Hf 0.5 Zr 0.5 O 2 …

2023年7月21日 · Hafnia-based ferroelectric tunnel junctions (FTJs) show potential applications in memory, logic, and neuromorphic computation. However, FTJs suffer from limitations in tunneling electroresistance (TER) effects due to weakened polarization as …

2023年5月4日 · Design parameters from FE layer thickness, polarizations, and coercive field to silicon doping and metal work functions are studied, with their impacts on key FTJ FoMs evaluated. The essential physics of the ferroelectric tunnel junction (FTJ) is assessed with technology computer-aided design (TCAD) simulations and analytical models.

2020年8月5日 · One of these new NVM technologies is a ferroelectric tunnel junction (FTJ): a two-terminal device where a thin ferroelectric layer is sandwiched between metals or semiconductors...

具有连续电场可控电阻状态的基于铁电隧道结（FTJ）的忆阻器被认为是未来高密度存储器和先进的神经形态计算架构的有希望的候选者。 然而，刚性单晶衬底的使用以及外延FTJ薄膜的高温生长构成了在柔性计算设备中使用这种异质结构的主要障碍。 在这里，我们通过水蚀刻基于外延氧化膜的剥离和随后的转移，报告了在柔性塑料基板上厘米级单晶FTJ的集成。 所得的高度柔性的FTJ膜保留了单晶结构以及稳定且可切换的铁电极化，作为已生长的单晶衬底状态。 我们表明，获 …

2020年12月14日 · We report on 4.5-nm-thick Hf 0.5 Zr 0.5 O 2 (HZO) thin-film-based ferroelectric tunnel junctions (FTJs) with a tungsten (W) bottom electrode. The HZO on the W electrode exhibits stable ferroelectricity with a remanent polarization of 14 μ C/cm 2, an enhanced tunneling electroresistance of 16, and excellent synaptic properties.