The successful formation of a TiSi2 product was be confirmed by scanning electron micrograph (SEM) images, Rutherford Backscatter Spectroscopy (RBS) data, and electrical characterization.

2021年6月15日 · In this study, a new process is proposed to prepare Titanium disilicide (TiSi 2) and eutectic Si–Ti alloy (Si/TiSi 2), using Ti-bearing blast furnace slag and low-purity Si as raw …

The goal of this experimentation consists of the formation of TiSi2 and demonstration of its electrical properties. The successful formation of a TiSiproduct was be confirmed by scanning …

1994年12月15日 · After tungsten deposition, the tungsten morphology was observed by scanning electron microscopy (SEM). Before tungsten deposition, the depth profile of TiSi2 was …

2009年2月11日 · Complex nanostructures of TiSi2 ranging from 1D nanowires, 2D nanonets to 3D structures, are obtained with excellent controls through controls of the growth chemistry. …

2019年1月1日 · TiSi2 film show a smooth interface without any agglomerations or voids, but TaSi2 films show buckling effect and delamination of thin film due to high residual stress, …

In this study we investigate the formation mechanisms and morphology of TiSi 2 formed by deposition of Ti on atomically clean silicon substrates. Ti films of 50–400 Å thickness were …

2010年1月5日 · TiSi 2 has been one of the most crucial silicides for complementary metal oxide semiconductor device applications such as contacts to source/drain actives and gate regions …

Titanium silicide (TiSi2) is well known for application as a local interconnect material in complementary metal-oxide semiconductor technology. This paper reports on a …

2010年1月5日 · TiSi2 has been one of the most crucial silicides for complementary metal oxide semiconductor device applications such as contacts to source/drain actives and gate regions …