
Large difference of doping behavior of tetracyanoquinodimethane (TCNQ …
2022年1月1日 · The similar rapid change with small amount of F4-TCNQ deposition was detected as the Fermi level shift in the ultra violet photoemission spectroscopy (UPS). The DFT calculation shows the flat lying configuration for both molecules after the structural optimization, and the difference of the charge transfer to the substrate is not large enough ...
Interface state and energy level alignment of F4-TCNQ …
2014年2月1日 · The influences of F 4-TCNQ on the energy level alignment of Pn films were investigated by UPS. F 4 -TCNQ deposition on the ethylene/Si(1 0 0) leads to an increase in the VL by 1 eV and a decrease in the HIB by 0.6–0.8 eV.
Fermi level pinning at interfaces with ... - ScienceDirect
2007年4月20日 · We have shown that the energy level alignment at the interfaces of tetrafluorotetracyanoquinodimethane (F4-TCNQ) and the substrates that span work function range from 3.45 to 5.8 eV corresponds to the Fermi level pinning regime. The Fermi level is pinned at 5.55 ± 0.1 eV as measured versus vacuum level.
High resolution UPS scans of F4-TCNQ-doped SQ films spun
We report p-type doping of 2,4-bis [4- (N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine (SQ) with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) by solution processing.
UPS spectra of perovskite, n-type doped spiro-OMETAD (DMC …
When used with Spiro-OMeTAD, vacuum-deposited F4-TCNQ has been found to create pinhole-free films that exhibit improved air stability and sustained PCEs over 810 hours, when compared to spin ...
Electron escape depth, surface composition, and charge transfer in ...
TTF-TCNQ deposited at 77°K is found to undergo irreversible changes in both its UPS spectra and its bulk thermal properties upon annealing to room temperature. A model is presented which accounts for these changes in terms of molecular rearrangements upon annealing which are accompanied by altered surface composition of the films and increased ...
钠插入四氰基喹二甲烷(TCNQ)的研究:通过表面科学方法获得的TCNQ …
我们将TCNQ薄膜逐步暴露于钠蒸气中,并通过X射线光电子能谱(XPS)和紫外光电子能谱(UPS)监控电子结构。 在插入实验期间,观察到三个阶段,它们可能与三个不同阶段有关,主要由TCNQ 0,TCNQ 1−和TCNQ 2−组成。 随着钠含量的增加,费米能级向上移动,新的电子态出现在带隙中。 对于钠含量高的相,钠的扩散似乎被抑制,这归因于TCNQ 1-分子结构中封闭的扩散途 …
[0909.2966] Band structure engineering of epitaxial graphene …
2009年9月16日 · We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizing graphene with the strong electron acceptor tetrafluorotetracyanoquinodimethane (F4-TCNQ). Charge neutrality can be reached in monolayer graphene as shown in electron dispersion spectra from angular resolved photoemission spectroscopy (ARPES).
UPS a) Fermi edge and b) secondary electron cut‐off of CuSCN and...
Improving Performance of Organic Photodetectors by Using TCNQ Doped Copper Thiocyanate as the Anode Interfacial Layer
Substantial improvement of perovskite solar cells stability by …
2015年5月18日 · We measured the energy level of highest occupied molecular orbital (HOMO) for each doping layer using in-situ ultraviolet photoemission spectroscopy (UPS). On the basis of the energetics studies,...