PECVD技术是在低气压下，利用低温等离子体在工艺腔体的阴极上（即样品放置的托盘）产生辉光放电，利用辉光放电（或另加发热体）使样品升温到预定的温度，然后通入适量的工艺气体，这些气体经一系列化学反应和等离子体反应，最终在样品表面形成固态薄膜。

射频-PECVD 依赖于电容耦合，在等离子体密度和前驱体解离方面存在固有的局限性，而 VHF-PECVD 则不同，它利用电感耦合产生密度更大的等离子体。

In contrast, Very High Frequency Plasma Chemical Vapor Deposition (VHF-PECVD) technology offers a substantial improvement in this regard. The VHF-excited plasma operates at a much lower temperature and boasts a higher electron density compared to …

2017年10月19日 · In this study, the authors investigated depositing thin, high-quality SiN x film on organic-based electronic devices, specifically, very high-frequency (162 MHz) plasma-enhanced chemical vapor...

2016年7月1日 · Very high frequency (VHF) PECVD has been demonstrated to be able to significantly increase the deposition rate without compromising the film quality for the manufacture of silicon heterojunction and silicon thin film solar cells.

at different depositing time under low temperature. Raman, XRD and AFM were used to characterize the m icrostructure of the thin film s. The result shows thatwith the lasting of deposition time, the silicon thin film s fabricate in island shape. And the crystalline volume ratio of the film s increased rap idly after the nucleation of the …

2004年3月22日 · The very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) technique is one of the most used approaches to grow device quality microcrystalline silicon within a short fabrication time [1].

采用拉曼散射光谱和PR650光谱光度计对VHF-PECVD制备的微晶硅薄膜进行了结构表征和在线监测研究.结果表明：功率对材料的晶化率（χc）有一定的调节作用，硅烷浓度大，微调作用更明显；SiH*的强度只能在一定的范围内表征材料的沉积速率，功率大相应的速率反而 ...

2005年5月1日 · 张晓丹, 赵颖, 朱锋, 魏长春, 高艳涛, 孙健, 侯国付, 薛俊明, 耿新华, 熊绍珍. VHF-PECVD制备微晶硅材料及电池 [J]. 半导体学报 (英文版), 2005, 26 (5): 952-957.

采用甚高频化学气相沉积 (VHF-PECVD)技术制备了系列微晶硅 (μc-Si:H)薄膜样品，重点研究了硅烷浓度、功率密度、沉积气压和气体总流量对薄膜沉积速率和结晶状态的影响,绘制了沉积气压和功率密度双因素相图.