2023年8月24日 · This work presents a method for regulation of the temperature field via temperature control of six heaters during VGF growth of InP crystal with numerical simulation, and shows the involution for both the melt convection and the …

Abstract: Undoped, S-doped and Fe-doped 4 inch diameter (100) InP single crystals with average dislocation etch pit density less than 5000 cm-2 have been grown by using high pressure vertical temperature gradient Freeze (VGF) method.A multiple points X-ray double crystal diffraction measurement across the 4 inch wafer indicates a full width at ...

2025年1月1日 · In the VGF-InP crystal growth technology, precise control of high-pressure gas flow within the furnace, melt temperature gradient, solid–liquid interface shape, and cooling rate is critical. Excessive gas flow disturbances and melt convection can easily lead to melt temperature fluctuations, resulting in defects such as twins and ...

与垂直布里奇曼法相比，垂直梯度冻结（vgf）工艺需要更精确地调节温度场，以确保晶种的成功引入和良好的晶体生长条件，例如合适的固液界面温度梯度。

In this study, the Recurrent Neural Network (RNN) was combined with Computational Fluid Dynamics (CFD) to predict the temperature and crystal growth height during the growth of indium phosphide single crystal by Vertical Gradient Freeze (VGF) method.

VGF垂直梯度凝固法可用于工业生产砷化镓（GaAs）、磷化铟（InP）和磷化镓（GaP）等晶体，生产的晶体可被光电学（LED和激光系统）、半导体技术、高频技术、太阳能技术和电信技术等多个高科技行业广泛应用。

2024年12月20日 · 本发明涉及半导体材料领域，具体涉及一种vgf和vb联动的磷化铟单晶生长方法。 背景技术： 1、磷化铟（inp）是一种重要的ⅲ-ⅴ族化合物半导体材料，具备饱和电子漂移速度高、发光波长适宜光纤低损通信、抗辐射能力强、导热性好、光电转换效率高、禁带宽度较高等特性，因此磷化铟晶片可被广泛应用于制造光模块器件、传感器件、高端射频器件等。 2、磷化铟单晶生长的过程实际上是一个温度控制的相变过程，先对磷化铟多晶加热使其熔化，从固相转化 …

VGF (vertical gradient freeze) technology produces the world's highest quality III-V semiconductors, including GaAs, InP, and GaP. In this paper, we review the latest developments of the VGF technology in terms of the crystal quality, electrical characteristics and mechanical strength, as well as epitaxy and implant applications.

2024年8月6日 · 通过对vgf生长中的生长条件、生长温度、晶体质量和低 位错密度等因素进行探究，得出了VGF生长技术制备高质量低 位错密度InP单晶的方法。

采用高压垂直温度梯度凝固法(VGF)生长了非掺、掺硫和掺铁的4 inch直径(100)InP单晶,获得的单晶的平均位错密度均小于5000 cm-2.对4 inch InP晶片上进行多点X-射线双晶衍射测试, 其(004)X-射线双晶衍射峰的半峰宽约为30弧秒且分布均匀.与液封直拉法(LEC)相比, VGF-InP单晶 ...