2024年3月4日 · In this work, we report a method to identify the number of T d -WTe 2 layers using simulated atomic-resolution HAADF-STEM images.

This method efficiently quantifies thicknesses in Td-WTe2, can be extended to related 2D materials, and provides a pathway to characterize precise atomic structures, including local thickness variations and atomic defects, for few-layer 2D materials with overlapping atomic column positions.",

该方法有效地量化了 Td-WTe2 的厚度，可以扩展到相关的二维材料，并为具有重叠原子柱位置的少层二维材料提供了表征精确原子结构的途径，包括局部厚度变化和原子缺陷。

2022年2月1日 · STEM characterization. The thickness of the oxidation layer was measured from high-angle annular dark-field (HAADF) image by using an ex-situ scanning transmission electron microscopy (STEM) at room temperature on a Talos (FEI) setup with 200 keV voltage.

Atomically thin transitional metal ditellurides like WTe2 and MoTe2 have triggered tremendous research interests because of their intrinsic nontrivial band structure. They are also predicted to...

2021年7月10日 · Oxygen plasma is used to carefully control the formation of defects on ultrathin WTe 2 nanosheets. Feather-like structure is observed in defect-rich WTe 2 samples for enhanced HER performance. Undercoordinated Te sites resulted from W …

2024年3月7日 · This method efficiently quantifies thicknesses in Td-WTe2, can be extended to related 2D materials, and provides a pathway to characterize precise atomic structures, including local thickness variations and atomic defects, for few-layer 2D materials with overlapping atomic column positions.

The tungsten ditelluride WTe2 likely belongs to type II Weyl semimetals. Doping WTe2 with magnetic ions could induce magnetic ordering in this crystal, which provides prospects for practical ...

2024年3月4日 · We have developed a benchmark dataset of simulated and experimental STEM images and used it to evaluate the performance of two sets of recent NN models for atom location in STEM images.

2024年3月4日 · This method efficiently quantifies thicknesses in Td-WTe2, can be extended to related 2D materials, and provides a pathway to characterize precise atomic structures, including local thickness variations and atomic defects, for few-layer 2D materials with overlapping atomic column positions.