2012年1月1日 · According to XPS analysis, the films almost consist of higher energy C-Si bonds under the higher power and lower chamber pressure. The bond structure hypothesis is well consistent with our previously achieved experimental observations concerning the evolution of surface roughness and microhardness with varying the sputtering power and chamber ...

2025年2月15日 · Silicon oxycarbide (SiCO) ceramics with nanodomain structures are new generation anode materials of all-solid-state batteries (ASSBs) with excellent lithium-ion capacity and cycling stability.

The high-resolution Si 2p XPS spectrum consists of a single peak with a binding energy of 102.64 eV, which was deconvoluted into two components at 102.61 and 103.51 eV corresponding to Si−C and...

2024年10月15日 · In this work, the formation mechanism of PECVD phosphorus doped hydrogenated microcrystalline oxycarbide silicon film (n-μc-SiCO:H) deposited from SiH 4, H 2, PH 3 and CO 2 mixed gases are discussed, and the interplay effects of H 2, PH 3 and CO 2 gas precursor on n-μc-SiCO:H layer formation are determined.

通过对各种候选低介电常数材料的性能和制备方法的综合分析，总结出SiCO(H)薄膜材料综合了无机材料良好的热稳定性和力学性能以及有机材料低k值的优点，为此，选取含有Si、C、O、H元素的前驱体分子为研究对象，通过溶胶凝胶的方法，利用旋涂工艺涂膜，获得 ...

Results reveal significant variations in composition and cluster morphology, influenced by the introduction of mesoporous silica tablets. The study demonstrates controlled deposition, consistent...

The XPS analyses focused on examining and documenting the electronic environment (chemical bonding) of the Si 2 p , C 1 s , and O 1 s core energy levels as a means to provide an independent ...

We have developed a technique to fabricate wedge polished samples (angle ~ 1x10-4 rad) that provides access to the SiO2/SiC interface via a surface sensitive probe such as x-ray photoelectron spectroscopy (XPS). Lateral scanning along …

2018年1月1日 · XPS analysis demonstrated the bonding characteristics, which explained the results of the electrical and etching properties. Si C bonds in SiOC decreased the dielectric constant due to a low ionic polarization while the carbon content acted as a defect that induced leakage currents.

After the hydrogen plasma process, the SiCO* film is oxidized (60% O and 40% Si) at the surface probed by XPS. Compared to the pristine film, the main difference after H2 plasma exposure is the important surface oxidation.