2008年8月15日 · Optical reflectance (R) and high-resolution X-ray diffraction (HR XRD) have been used for characterization and verification of the distributed Bragg reflectors (DBR) grown by two competing and complementary techniques: molecular beam epitaxy (MBE) and low-pressure metalorganic vapor phase epitaxy (LP MOVPE).

2016年7月6日 · The TEM and XRD results show that a state-of-the-art DBR structure with atomic-level-flatness interfaces was achieved. The DBR exhibits a peak reflectivity of 86% at the centre wavelength of...

2022年6月29日 · Atomic force microscopy and X-ray diffraction (XRD) were used to investigate the influence of ozone treatment on the structure of the substrates. The hybrid organic–inorganic CH 3...

2015年11月25日 · We propose and demonstrate for the first time the use of the SiC-on-Si technology to fabricate a vertically conductive single-crystal distributed Bragg reflector (DBR) on Si substrate. Such...

2015年6月4日 · Distributed Bragg reflectors (DBRs) with peak reflectivity at approximately 280 nm, based on compositionally graded Al x Ga 1−x N alloys, were grown on 6H-SiC substrates by plasma-assisted molecular beam epitaxy. DBRs with square, sinusoidal, triangular, and sawtooth composition profiles were designed with the transfer matrix method.

2022年11月7日 · Al0.9Ga0.1As/GaAs distributed Bragg reflector (DBR) structure with different doping type and doping concentrations was grown by metal organic chemical vapor deposition (MOCVD), and the material and optoelectronic characteristics were studied by X-ray diffraction (XRD) rocking curves, scanning electron microscopy (SEM), electrochemical ...

2014年11月1日 · Crack-free AlGaN/GaN distributed Bragg reflectors (DBRs) for the near-UV region were grown on 6H-SiC substrates by metal–organic chemical vapor deposition (MOCVD). To suppress the generation of cracks, a thin SiN x interlayer was introduced between the first pair of AlGaN/GaN DBR layers.

2019年12月4日 · Here, we show that high-resolution x-ray diffraction (XRD) offers an alternative, nondestructive method for characterizing porous nitride structures. XRD scans of porous GaN DBRs show that despite the constant lattice parameter across the DBR layers, characteristic satellite peaks still arise, which are due to the interference between x-rays ...

利用MOCVD方法在(0001)取向的蓝宝石衬底上实现了不同工艺条件下的高质量AlGaN材料的制备.得到了无裂纹的全组分AlxGa1-xN(0x1)薄膜.通过XRD，SEM，AFM等测量分析方法系统研究了生长工艺参数对材料的结构质量、组分、厚度和表面形貌的影响.分析了不同生长工艺对AlGaN ...

2021年12月4日 · The surface and cross section of the DBR samples were observed by scanning electron microscopy (SEM). The surface roughness and morphology of the DBR samples were measured by atomic force microscopy (AFM). X-ray diffraction (XRD) measurement was carried out for the E-mail address: [email protected] structural analysis of the DBR samples.