Increasing chip performance with respect to static and dynamic losses is an essential prerequisite to accommodate the continuous demand for higher power densities of inverters. Here, we …

.XT interconnection technology is enabling the shift to renewable energy. With solutions for both CoolSiC™ MOSFET discretes and IGBT modules, .XT interconnection technology is …

th generation IGBT and diode, the .XT technology has been introduced [1,2]. It comprises a set of new packaging technologies - namely Cu wire bonding, diffusion soldering or silver sintering …

Abstract: To meet the requirements of Infineon's 5th generation IGBT and diode, the .XT technology has been introduced [1,2]. It comprises a set of new packaging technologies - …

FF1200R12IE5 is the first PrimePACKTM 2 product from Infineon with IGBT5 and .XT joining technology. It implements Infineon’s IGBT5 TRENCHSTOPTM and Emitter Controlled 5 diode …

.XT joining technology. This novel joining technology implements copper wire bonding and sintered silver as a die attach layer. The module employs Infineon’sIGBT5 TREN …

Increasing chip performance with respect to static and dynamic losses is an essential prerequisite to accommodate the continuous demand for higher power densities of inverters. Here, we …

2015年5月1日 · This article discusses the advantages of Infineon's 5th generation of 1700V IGBT with .XT technology and emitter controlled diode for inverter applications. Enhanced power …

标准的Spice二极管模型的语法,都是相同的，so 你可以去LTspice里面看看你想要的二极管那个模型是怎么写的，直接Copy过来即可，但咱们先看看Diode部分的描述,见图3.说明书中的例子如 …

2024年10月28日 · XT interconnection technology, the CoolSiC Schottky diode 2000V G5 achieves significantly lower impedance and thermal resistance, allowing for improved heat …