
Realization of monolayer ZrTe5 topological insulators with wide …
2024年6月5日 · Here, authors synthesize a potential host system — monolayer ZrTe5 — and demonstrate it possesses a band gap wide enough for potential room-temperature applications.
Anomalous Hall effect in ZrTe5 - Nature Physics
2018年3月19日 · Magnetotransport measurements show that ZrTe5 exhibits an anomalous Hall effect without magnetic ordering, a signature of Berry curvature introduced by Weyl nodes.
Three-dimensional quantum Hall effect and metal–insulator ... - Nature
2019年5月8日 · Here we report the experimental realization of the 3D QHE in bulk zirconium pentatelluride (ZrTe 5) crystals. We perform low-temperature electric-transport measurements …
Gate-Tunable Multiband Transport in ZrTe5 Thin Devices
Here, through employing a clean dry-transfer fabrication method in an inert environment, we successfully obtain high-quality ZrTe 5 thin devices that exhibit clear dual-gate tunability and …
黄华卿课题组与合作者揭示拓扑材料五碲化锆薄膜中的自发空间反 …
北京大学物理学院理论物理研究所黄华卿课题组发现拓扑材料五碲化锆(ZrTe5)薄膜中的自发空间反演对称性破缺现象,并揭示该现象源自层间滑移和细微的层内畸变,进而预测了由对称性 …
ZrTe5中温度诱导Lifshitz转变的发现及其拓扑本质 - 中国科学院物 …
最近,理论计算预言,单层的ZrTe 5 / HfTe 5 是大能隙的量子自旋霍尔材料,在体能隙中存在着受拓扑保护的边缘态。 块材ZrTe 5 / HfTe 5 可能处于强弱拓扑绝缘体态的边界,随着层间距的 …
Evidence for a strain-tuned topological phase transition in ZrTe5
2019年8月9日 · We report measurements of strain dependence of electrical transport properties of ZrTe 5, which is known to host massive Dirac fermions in the bulk due to its proximity to a …
Experimental Observation of Topological Edge States at the …
2016年4月28日 · We report an atomic-scale characterization of $ {\mathrm {ZrTe}}_ {5}$ by using scanning tunneling microscopy. We observe a bulk band gap of $\ensuremath {\sim}80\text { …
Observation and control of the weak topological insulator state in ...
2021年1月18日 · Here, we visualize the topological states of the WTI candidate ZrTe5 by spin and angle-resolved photoemission spectroscopy (ARPES): a quasi-1D band with spin-momentum …
The metal-insulator transition in ZrTe5 induced by temperature
2018年12月7日 · Here we have explained this by temperature-induced swapping of the dominating carriers from holes to electrons, evidenced by magneto-transport and angle …
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