A MOS, short for Metal-Oxide-Semiconductor capacitor, has the s... | Filo

MOS Transistors (Part 8: Large-Signal and Small-Signal Models)

When an MOS transistor is biased with VD>VD (sat.), the effective channel length is reduced by ΔL and the current ID^' is larger than ID (sat.), as shown in Fig.6-32. Assuming that the depleted region ΔL is described by an expression similar to Eq. (6-30) with VD-VD( sat. ) for the voltage across ΔL, show that the conductance beyond saturation is gD^'=(∂ID^')/(∂VD)=ID (sat.) (∂)/(∂VD)((L)/(L-ΔL)) and find the expression for gD^' in terms of VD. | Numerade